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Proceedings Paper

Deep-ultraviolet lithography for 500-nm devices
Author(s): Steven J. Holmes; Ruth Levy; Albert S. Bergendahl; Karey L. Holland; John G. Maltabes; Stephen E. Knight; Katherine C. Norris; Denis Poley
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Paper Abstract

Each DRAM design generation has required higher reoiution imaging and overlay capability. The 500-nm lithographic ground rules of a 16-Mb chip make deep-UV (DUV) an attractive alternative to,thc more stanth,rd mid-UV (MUV) photolithography presently practiced for less demanding technologies. The shorter wavelength permits an unproved depth of focus by allowing the same resolution at smaller numerical apertures. This approach retains the simplicity of single-layer-resist processing rather th a ii forcing conversion to m ultilayer imaging.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20180
Show Author Affiliations
Steven J. Holmes, IBM Corp. (United States)
Ruth Levy, IBM Corp. (United States)
Albert S. Bergendahl, IBM Corp. (United States)
Karey L. Holland, IBM Corp. (United States)
John G. Maltabes, IBM Corp. (United States)
Stephen E. Knight, IBM Corp. (United States)
Katherine C. Norris, IBM Corp. (United States)
Denis Poley, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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