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Proceedings Paper

Relaxation of photoconductivity in porous silicon for gas sensing
Author(s): L. S. Monastyrskii
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Paper Abstract

The model of relaxation of photoconductivity of porous silicon, in which recombination of photocarriers is taken into account on the spherical surface of pores at the shutdown of illumination, is presented and numerically investigated. By the finite element method it is calculated time evolution of the photoconductivity of porous silicon and dependence of the relaxation time of photoconductivity on the surface recombination velocity, which is determined by a concentration and nature of adsorbed gas, as well as on the radius of pores and average distance between them

Paper Details

Date Published: 31 May 2013
PDF: 5 pages
Proc. SPIE 8718, Advanced Environmental, Chemical, and Biological Sensing Technologies X, 87180P (31 May 2013); doi: 10.1117/12.2017999
Show Author Affiliations
L. S. Monastyrskii, Ivan Franko National Univ. of L'viv (Ukraine)


Published in SPIE Proceedings Vol. 8718:
Advanced Environmental, Chemical, and Biological Sensing Technologies X
Tuan Vo-Dinh; Robert A. Lieberman; Günter G. Gauglitz, Editor(s)

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