Share Email Print
cover

Proceedings Paper

The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures
Author(s): A. L. Karuzskii; V. V. Kapaev; V. N. Murzin; Yu. A. Mityagin; S. A. Savinov; A. V Perestoronin; A. M. Tshovrebov; N. A. Volchkov; I. P. Kazakov; V. I. Egorkin; S. S. Shmelev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Development of physical principles of THz-wave amplification and oscillation is one of problems determining progress in modern solid state electronics towards high frequencies and ultrahigh performance. Novel perspectives are tied with use of resonant tunneling quantum effects, characterized by transient times less than 1 ps, comparable with fast response of superconducting devices. The information about these properties can be obtained from investigation of high-frequency oscillations or current-voltage switching phenomena in resonant-tunneling (RTD) nanostructures. In the paper the results of theoretical and experimental studies of high-frequency properties of RTD elements in subterahertz and terahertz frequency range are presented basing on developed theory of high-frequency response in RTD as well as on experimental high-frequency investigation data and current-voltage switching phenomena investigation results of effects correspondingly related to stationary current characteristics changes in single-quantum-well as well as in doublequantum- well resonant-tunneling diode nanostructures under external electromagnetic electrical field.

Paper Details

Date Published: 8 January 2013
PDF: 10 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000P (8 January 2013); doi: 10.1117/12.2017876
Show Author Affiliations
A. L. Karuzskii, P.N. Lebedev Physical Institute (Russian Federation)
V. V. Kapaev, P.N. Lebedev Physical Institute (Russian Federation)
V. N. Murzin, P.N. Lebedev Physical Institute (Russian Federation)
Yu. A. Mityagin, P.N. Lebedev Physical Institute (Russian Federation)
S. A. Savinov, P.N. Lebedev Physical Institute (Russian Federation)
A. V Perestoronin, P.N. Lebedev Physical Institute (Russian Federation)
A. M. Tshovrebov, P.N. Lebedev Physical Institute (Russian Federation)
N. A. Volchkov, P.N. Lebedev Physical Institute (Russian Federation)
I. P. Kazakov, P.N. Lebedev Physical Institute (Russian Federation)
V. I. Egorkin, P.N. Lebedev Physical Institute (Russian Federation)
S. S. Shmelev, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top