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Proceedings Paper

Assessment of high-contrast G- and I-line resists using high-numerical-aperture exposure tools
Author(s): Alois Gutmann; Johann Binder; Guenther Czech; Juergen Karl; Leonhard Mader; Daniel Sarlette; Wolfgang Henke
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Paper Abstract

Tests of several high contrast g- and i-line resists furnish data with respect to the resolution limit focus and exposure latitudes thermal stability and Dill parameters. A g. -line stepper of NA 0. 48 and an i-line stepper of NA 0. 40 were primarily used for exposure to a minor extent a g-line stepper of NA 0. 55. The contributions to the focus budget available under production conditions are discussed. SAMPLE simulations extending NA to 0. 60 in the gline and 0. 50 in the i-line case give latitude trends to be expected in the near future. 1.

Paper Details

Date Published: 1 June 1990
PDF: 14 pages
Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20178
Show Author Affiliations
Alois Gutmann, Siemens AG (Germany)
Johann Binder, Siemens AG (Germany)
Guenther Czech, Siemens AG (Germany)
Juergen Karl, Siemens AG (Germany)
Leonhard Mader, Siemens AG (Germany)
Daniel Sarlette, Siemens AG (Germany)
Wolfgang Henke, Fraunhofer Institut fuer Mikrostrukturtechnik (Germany)


Published in SPIE Proceedings Vol. 1264:
Optical/Laser Microlithography III
Victor Pol, Editor(s)

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