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Proceedings Paper

A comparison of the Ge-Sb-Te and Si-Sb-Te film oxidization at atmosphere
Author(s): Wanchun Ren; Bo Liu; Zhitang Song; Xuezhen Jing; Yanghui Xiang; Haibo Xiao; Zongtao Wang; Beichao Zhang; Jia Xu; Guanping Wu; Ruijuan Qi; Chunyan Fan; Shuqing Duan; Qinqin Yu; Songlin Feng
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Paper Abstract

New phase change materials development has become one of the most critical modules in the fabrication of low power consumption and good data retention phase change memory (PCM). Among various candidates of new phase change materials, SiSbTe (SST) is one of the most promising materials due to its benefits of low RESET current, high crystallization temperature, good adhesion and small volume shrinkage during phase change from amorphous to crystalline state. However, the oxidization of SST film was found when exposing to the atmosphere. By analyzing the depth profile of chemical states, we found oxygen more easily penetrated into the SST film and bonded with Si and Sb compared to GeSbTe (GST) film. The oxidization mechanism between SST and GST was briefly discussed. We achieved 80% improvement of oxidization issue by nitrogen and argon surface treatment. We proposed a manufacturing solution of SST for PCM.

Paper Details

Date Published: 24 January 2013
PDF: 5 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820J (24 January 2013); doi: 10.1117/12.2017630
Show Author Affiliations
Wanchun Ren, Shanghai Institute of Microsystem and Information Technology (China)
Semiconductor Manufacturing International Corp. (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Xuezhen Jing, Semiconductor Manufacturing International Corp. (China)
Yanghui Xiang, Semiconductor Manufacturing International Corp. (China)
Haibo Xiao, Semiconductor Manufacturing International Corp. (China)
Zongtao Wang, Semiconductor Manufacturing International Corp. (China)
Beichao Zhang, Semiconductor Manufacturing International Corp. (China)
Jia Xu, Semiconductor Manufacturing International Corp. (China)
Guanping Wu, Semiconductor Manufacturing International Corp. (China)
Ruijuan Qi, Semiconductor Manufacturing International Corp. (China)
Chunyan Fan, Semiconductor Manufacturing International Corp. (China)
Shuqing Duan, Semiconductor Manufacturing International Corp. (China)
Qinqin Yu, Semiconductor Manufacturing International Corp. (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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