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Proceedings Paper

Atomic force microscopy for line edge roughness measurements
Author(s): A. Y. Sosnina; A. E. Rogozhin; A. V. Miakonkikh
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Paper Abstract

It is known that the influence of line edge roughness (LER), formed during lithography and plasma etching processes, on the MOSFET characteristics becomes more critical with downscaling of the device. This is because LER and line width roughness do not scale down with the dimensions of the devices. High values of LER can lead to increase of current leakage and voltage fluctuations and hence cause degradation of circuit performance and yield. However the gate LER is hard to measure by conventional tools. Therefore reliable LER metrology approach is required. In this study conventional AFM technique is used to estimate LER.

Paper Details

Date Published: 10 January 2013
PDF: 6 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870010 (10 January 2013); doi: 10.1117/12.2017529
Show Author Affiliations
A. Y. Sosnina, Institute of Physics and Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. E. Rogozhin, Institute of Physics and Technology (Russian Federation)
A. V. Miakonkikh, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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