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Proceedings Paper

Focused ion-beam-assisted deposition of tungsten
Author(s): Yuichi Madokoro; Tsuyoshi Ohnishi; Tohru Ishitani
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Paper Abstract

Formation of fine conductive layer patterns by focused ion beam ( FIB ) using tungsten hexacarbonyl [W(CO)6] has been carried out to study its deposition mechanism. The effects of beam current density on the deposition rate, using a chamber-type gas delivery system and a nozzle-type system has been investigated and compared. It is found that the amount of dependence of deposition yield on current density differs between the two systems. In addition, the difference in gas pressures of the two systems cause different compositions of the deposits.

Paper Details

Date Published: 1 May 1990
PDF: 11 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20174
Show Author Affiliations
Yuichi Madokoro, Hitachi, Ltd. (Japan)
Tsuyoshi Ohnishi, Hitachi, Ltd. (Japan)
Tohru Ishitani, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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