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Proceedings Paper

Analysis of thermal vias in molded interconnect devices
Author(s): Jörg Reitterer; Franz Fidler; Ferdinand Saint Julien-Wallsee; Maximilian Barth; Wolfgang Eberhardt; Ulrich Keßler; Heinz Kück; Ulrich Schmid
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Paper Abstract

The ongoing miniaturization of micro-opto-electro-mechanical-systems requires compact multifunctional packaging solutions like offered by the three-dimensional MID (molded interconnect device) technology which combines integrated electronic circuitry and mechanical support structures directly into one compact housing. Due to the inherently large thermal resistance of thermoplastic MID substrate materials, temperature-sensitive applications require carefully arranged thermal vias in order to reduce the thermal resistance of the packaging effectively. This paper presents the analysis and optimization of various laser-drilled thermal via design parameters of MIDs including hole diameter, pitch, plating thickness of the Cu/Ni/Au metallization layers as well as the void level of the filling material inside the vias.

Paper Details

Date Published: 17 May 2013
PDF: 8 pages
Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87630B (17 May 2013); doi: 10.1117/12.2017361
Show Author Affiliations
Jörg Reitterer, TriLite Technologies GmbH (Austria)
Franz Fidler, TriLite Technologies GmbH (Austria)
Ferdinand Saint Julien-Wallsee, TriLite Technologies GmbH (Austria)
Maximilian Barth, Hahn-Schickard-Institute for Micro Assembly Technology (Germany)
Wolfgang Eberhardt, Hahn-Schickard-Institute for Micro Assembly Technology (Germany)
Ulrich Keßler, Hahn-Schickard-Institute for Micro Assembly Technology (Germany)
Heinz Kück, Hahn-Schickard-Institute for Micro Assembly Technology (Germany)
Ulrich Schmid, Vienna Univ. of Technology (Austria)


Published in SPIE Proceedings Vol. 8763:
Smart Sensors, Actuators, and MEMS VI
Ulrich Schmid; José Luis Sánchez de Rojas Aldavero; Monika Leester-Schaedel, Editor(s)

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