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Proceedings Paper

Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals
Author(s): Valery A. Zhukov; V. G. Maslov
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Paper Abstract

A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir55 nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 1011 Hz and size of 32x32x12 nm3. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate UG is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir55 is 1.5 * 10-5 A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is Kq = 1, and the power gain is equal to KP ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 104 W/cm2.

Paper Details

Date Published: 8 January 2013
PDF: 13 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (8 January 2013); doi: 10.1117/12.2017306
Show Author Affiliations
Valery A. Zhukov, St. Petersburg Institute for Informatics and Automation (Russian Federation)
V. G. Maslov, St. Petersburg National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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