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Proceedings Paper

Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs
Author(s): S. S. Pushkarev; G. B. Galiev; E. A. Klimov; D. V. Lavrukhin; I. S. Vasil'evskii; R. M. Imamov; I. A. Subbotin; O. M. Zhigalina; V. G. Zhigalina; P. A. Buffat; B. Dwir; E. I. Suvorova
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Paper Abstract

Metamorphic InхAl1–хAs buffer design influence on electrophysical and structural properties of the MHEMT nanoheterostructures was investigated. Electrophysical properties of the nanoheterostructures were characterized by Hall measurements, while the structural features were described with the help of transmission electron microscopy. The strained superlattices inserted in the metamorphic buffer are shown to filter threading dislocations preventing their penetration in active region. Moreover, the increase of period number in superlattices enhances such effect. Step-graded metamorphic buffer permitted to reach the minimal surface roughness with rather high electron mobility.

Paper Details

Date Published: 3 January 2013
PDF: 5 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870007 (3 January 2013); doi: 10.1117/12.2017272
Show Author Affiliations
S. S. Pushkarev, Institute of UHF Semiconductor Electronics (Russian Federation)
National Research Nuclear Univ. MEPhI (Russian Federation)
G. B. Galiev, Institute of UHF Semiconductor Electronics (Russian Federation)
E. A. Klimov, Institute of UHF Semiconductor Electronics (Russian Federation)
D. V. Lavrukhin, Institute of UHF Semiconductor Electronics (Russian Federation)
I. S. Vasil'evskii, Institute of UHF Semiconductor Electronics (Russian Federation)
National Research Nuclear Univ. MEPhI (Russian Federation)
R. M. Imamov, A.V. Shubnikov Institute of Crystallography (Russian Federation)
I. A. Subbotin, A.V. Shubnikov Institute of Crystallography (Russian Federation)
O. M. Zhigalina, A.V. Shubnikov Institute of Crystallography (Russian Federation)
V. G. Zhigalina, A.V. Shubnikov Institute of Crystallography (Russian Federation)
P. A. Buffat, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
B. Dwir, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
E. I. Suvorova, A.V. Shubnikov Institute of Crystallography (Russian Federation)
Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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