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Proceedings Paper

Phase-shift in waveguide integrated Ge quantum wells
Author(s): Jacopo Frigerio; Papichaya Chaisakul; Delphine Marris-Morini; Stefano Cecchi; Mohamed-Said Rouifed; Giovanni Isella; Laurent Vivien
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Paper Abstract

We report on the electro-refractive effect in Ge/SiGe multiple quantum wells grown by low energy plasma enhanced chemical vapor deposition (LEPECVD). The electro-refractive effect was experimentally characterized by the shift of Fabry-Perot fringes in the transmission spectra of a 64 μm long slab waveguide. A refractive index variation up to 1.3 × 10-3 was measured with an applied electric field of 88 kV/cm at 1475 nm, 50 meV below the excitonic resonance, with a VπLπ figure of merit of 0.46 V×cm. The device performances are promising for the realization of Mach Zehnder modulators in the Ge-Si material platform.

Paper Details

Date Published: 22 May 2013
PDF: 9 pages
Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670B (22 May 2013); doi: 10.1117/12.2017249
Show Author Affiliations
Jacopo Frigerio, Politecnico di Milano (Italy)
Papichaya Chaisakul, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Stefano Cecchi, Politecnico di Milano (Italy)
Mohamed-Said Rouifed, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)
Giovanni Isella, Politecnico di Milano (Italy)
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris Sud (France)


Published in SPIE Proceedings Vol. 8767:
Integrated Photonics: Materials, Devices, and Applications II
Jean-Marc Fédéli; Laurent Vivien; Meint K. Smit, Editor(s)

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