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Proceedings Paper

Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy
Author(s): D. Hanzii; E. Kelm; N. Luapunov; R. Milovanov; G. Molodcova; M. Yanul; D. Zubov
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Paper Abstract

During a failure analysis of integrated circuits, containing non-volatile memory, it is often necessary to determine its contents while Standard memory reading procedures are not applicable. This article considers how the state of NVM cells with floating gate can be determined using scanning probe microscopy. Samples preparation and measuring procedure are described with the example of Microchip microcontrollers with the EPROM memory (PIC12C508) and flash-EEPROM memory (PIC16F876A).

Paper Details

Date Published: 8 January 2013
PDF: 11 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000V (8 January 2013); doi: 10.1117/12.2017156
Show Author Affiliations
D. Hanzii, Institute of Nanotechnology of Microelectronics (Russian Federation)
E. Kelm, NT-MDT (Russian Federation)
N. Luapunov, NT-MDT (Russian Federation)
R. Milovanov, NT-MDT (Russian Federation)
G. Molodcova, NT-MDT (Russian Federation)
M. Yanul, Institute of Nanotechnology of Microelectronics (Russian Federation)
D. Zubov, NT-MDT (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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