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Proceedings Paper

Fabrication of integrated electrodes of molecular transistor by lithographic techniques and electromigration
Author(s): A. S. Stepanov; E. S. Soldatov; O. V. Snigirev
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Paper Abstract

Integrated electrodes of molecular transistor were obtained. Electrodes includes thin-film Au strips with a 2 - 3 nm gap between them and Al gate electrode covered by Al2O3 oxide. The gap formation were made by electromigration technique and self-breaking process. Small (3 - 5 nm) gold nanoparticle were placed into the gap by self assembling. IV curves were measured at room temperature. These IV curves demonstrated single-electron conductivity of system. Such integrated system of electrodes is suitable to be the source-drain electrodes of planar single-electron transistors based on nano-particles or molecules.

Paper Details

Date Published: 8 January 2013
PDF: 5 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000C (8 January 2013); doi: 10.1117/12.2017106
Show Author Affiliations
A. S. Stepanov, Moscow State Univ. (Russian Federation)
E. S. Soldatov, Moscow State Univ. (Russian Federation)
O. V. Snigirev, Moscow State Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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