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Proceedings Paper

Influence of irregular growth of monoatomic steps during Si/Si(001) epitaxy on generation of surface defects
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Paper Abstract

We present results of STM investigation of surface of the Si epitaxial layers deposited on different Si(001) vicinal substrates at the step flow growth mode. We have observed two types of the growth defects looking like meandering or pits. The way of the defects formation does not depend on the direction of tilt of the Si(001) substrate. The formation of the defects is connected with particularities of the processes of the movement onto terraces and attachment to the step edge of Si ad-atoms during growth. We suppose that Ehrlich-Schwoebel and kink Ehrlich-Schwoebel effects drive irregular growth of the monoatomic steps during Si/Si(001) epitaxy. Process of the defect formation starts when the deep kink confined by two Sa steps appears on the step edge. Next difference between growth rate of the Sa and Sb steps results in formation of the area with other morphology.

Paper Details

Date Published: 22 May 2013
PDF: 8 pages
Proc. SPIE 8766, Nanotechnology VI, 87660M (22 May 2013); doi: 10.1117/12.2017083
Show Author Affiliations
Larisa V. Arapkina, A. M. Prokhorov General Physics Institute (Russian Federation)
Vladimir A. Yuryev, A. M. Prokhorov General Physics Institute (Russian Federation)


Published in SPIE Proceedings Vol. 8766:
Nanotechnology VI
Rainer Adelung, Editor(s)

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