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Proceedings Paper

Natural oxide thickness measurements on the test silicon relief pitch structure
Author(s): M. N. Filippov; M. A. Ermakova; V. P. Gavrilenko; A. A. Kuzin; A. Yu Kuzin; A. A. Kuzmin; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua; A. V. Zablotskiy
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Paper Abstract

The study was performed on a test step relief structure of monocrystalline silicon. There was experimentally measured the thickness of the natural oxide on this structure consisting of a set of elements (protrusions) with a trapezoidal profile and 2.0 μm step size, upper base about 10 nm, height about 500 nm. The tilt angle of side face with respect to the lower base was 54.7°. The entire structure was covered with a natural oxide film that appeared at room temperature, the thickness of which is being measured using a transmission electron microscope with atomic resolution by the observed pattern in the direct mode resolution of the crystal structure. In order to calibrate the measurements a distance between {111} planes was used. It was shown experimentally, that in the area of this bottom the natural oxide thickness increases from 2.3 ± 0.2 nm in the middle of the bottom to 3.0 ± 0.2 nm and 4.5 ± 0.2 nm at the left and right edges of the bottom, respectively.

Paper Details

Date Published: 8 January 2013
PDF: 6 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000U (8 January 2013); doi: 10.1117/12.2017079
Show Author Affiliations
M. N. Filippov, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
M. A. Ermakova, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
V. P. Gavrilenko, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
A. A. Kuzin, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
A. Yu Kuzin, Ctr. for Surface and Vacuum Research (Russian Federation)
A. A. Kuzmin, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
V. B. Mityukhlyaev, Ctr. for Surface and Vacuum Research (Russian Federation)
A. V. Rakov, Ctr. for Surface and Vacuum Research (Russian Federation)
P. A. Todua, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)
A. V. Zablotskiy, Moscow Institute of Physics and Technology (Russian Federation)
Ctr. for Surface and Vacuum Research (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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