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Proceedings Paper

Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal
Author(s): Ivan V. Malyar; Dmitry A. Gorin; Svetlana V. Stetsyura
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Paper Abstract

In this report we present the analysis of I-V curves for MIS-structures like silicon substrate / nanodimensional polyelectrolyte layer / metal probe (contact) which is promising for biosensors, microfluidic chips, different devices of molecular electronics, such as OLEDs, solar cells, where polyelectrolyte layers can be used to modify semiconductor surface. The research is directed to investigate the contact phenomena which influence the resulting signal of devices mentioned above. The comparison of I-V characteristics of such structures measured by scanning tunnel microscopy (contactless technique) and using contact areas deposited by thermal evaporation onto the organic layer (the contact one) was carried out. The photoassisted I-V measurements and complex analysis based on Simmons and Schottky models allow one to extract the potential barriers and to observe the changes of charge transport in MIS-structures under illumination and after polyelectrolyte adsorption. The direct correlation between the thickness of the deposited polyelectrolyte layer and both equilibrium tunnel barrier and Schottky barrier height was observed for hybrid structures with polyethylenimine. The possibility of control over the I-V curves of hybrid structure and the height of the potential barriers (for different charge transports) by illumination was confirmed. Based on experimental data and complex analysis the band diagrams were plotted which illustrate the changes of potential barriers for MIS-structures due to the polyelectrolyte adsorption and under the illumination.

Paper Details

Date Published: 3 January 2013
PDF: 9 pages
Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870009 (3 January 2013); doi: 10.1117/12.2017068
Show Author Affiliations
Ivan V. Malyar, N.G. Chernyshevsky Saratov State Univ. (Russian Federation)
Dmitry A. Gorin, N.G. Chernyshevsky Saratov State Univ. (Russian Federation)
Svetlana V. Stetsyura, N.G. Chernyshevsky Saratov State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 8700:
International Conference Micro- and Nano-Electronics 2012
Alexander A. Orlikovsky, Editor(s)

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