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Proceedings Paper

Optimal doping of GaSe with isovalent elements
Author(s): Victor V. Atuchin; Yury M. Andreev; Konstantin A. Kokh; Grigory V. Lanskii; Anna V. Shaiduko; T. I. Izaak; V. A. Svetlichnyi
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Paper Abstract

The сentimeter-sized GaSe crystals doped with 0.01, 0.05, 0.1, 0.2, 0.5, 1, 2 at.% of Al and 0.025, 0.1, 0.5, 1,2 at. % of Er have been grown by the modified Bridgman method with heat field rotation. The crystals have been studied in comparison with GaSe crystals doped with 0.1, 0.5, 1, 2, 3, 5, 7, 10.2 wt.% of S, 0.01, 0.1, 0.5, 1, 2, 3, 5 wt.% of In and 0.01, 0.1, 0.5, 1, 2 wt. % of Te grown by the conventional Bridgman method. The distribution coefficient of Al in the grown GaSe:Al (≥0.1 at.%) crystals has been estimated to be ∼8⋅10-3 and it is within the range of 10-2-10-3 in Er-doped crystals. For the first time, the optimal doping levels have been estimated for Al and Er in GaSe as 0.01- 0.05 at.% for Al and ~ 0.5 wt.% for Er, respectively.

Paper Details

Date Published: 8 May 2013
PDF: 9 pages
Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87721Q (8 May 2013); doi: 10.1117/12.2017059
Show Author Affiliations
Victor V. Atuchin, AV Rzhanov Institute of Semiconductor Physics (Russian Federation)
Yury M. Andreev, Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch (Russian Federation)
Konstantin A. Kokh, Institute of Geology and Mineralogy, Siberian Branch (Russian Federation)
Grigory V. Lanskii, Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch (Russian Federation)
Anna V. Shaiduko, Institute of Monitoring of Climatic and Ecological Systems, Siberian Branch (Russian Federation)
T. I. Izaak, Tomsk State Univ. (Russian Federation)
V. A. Svetlichnyi, Tomsk State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 8772:
Nonlinear Optics and Applications VII
Mario Bertolotti; Joseph Haus; Alexei M. Zheltikov, Editor(s)

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