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Proceedings Paper

Optimization of write operation in phase change memory
Author(s): Xiao Hong; Zhitang Song; Houpeng Chen; Yifeng Chen; Cong Fu; Xi Li; Yiyun Zhang
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Paper Abstract

This paper presents an optimized write driver used in Phase change memory (PCM). To pursue fast RESET/SET operation, the proper clock scheme is applied, with the maximum frequency at about 200MHz. The write driver uses current pulses at a fixed frequency to successfully write into memory cells. Compared with the traditional SET operation, the novel dual-pulse SET operation divides the program pulse into 2 periods: pre-programming period provides large energy to cross the threshold-switching fast, programming period quenches the phase change resistance to that of the crystalline state. The optimization of the write operation decrease the program time and improves the resistance distribution.

Paper Details

Date Published: 24 January 2013
PDF: 7 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878211 (24 January 2013); doi: 10.1117/12.2016972
Show Author Affiliations
Xiao Hong, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Houpeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Yifeng Chen, Shanghai Institute of Microsystem and Information Technology (China)
Cong Fu, Shanghai Institute of Microsystem and Information Technology (China)
Xi Li, Shanghai Institute of Microsystem and Information Technology (China)
Yiyun Zhang, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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