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Proceedings Paper

System-9: a new positive tone novalac-based high-resolution electron-beam resist
Author(s): Asanga H. Perera; J. Peter Krusius
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Paper Abstract

The performance of a new positive tone novalac-based resist, SYSTEM-9, has been characterized on a Cambridge Instruments EBMF-1O.5 electron beam lithography tool. Resist characteristics and the optimum processing conditions for a variety of commercially available developers have been investigated. This resist yields relative contrasts of up to 14, sensitivities from 19 to 32 (jtC/cm2) and a good resolution of 0.2 jim. SYSTEM-9 has excellent dry etch resistance. Outstanding applications in submicron micro-electronic device fabrication are demonstrated.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20169
Show Author Affiliations
Asanga H. Perera, Cornell Univ. (United States)
J. Peter Krusius, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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