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Proceedings Paper

PRIME process: an alternative to multiple layer resist systems and high accelerating voltage for e-beam lithography
Author(s): Serge V. Tedesco; Christophe Pierrat; Francoise Vinet; Brigitte Florin; Michel Lerme; Jean Charles Guibert
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Paper Abstract

A new positive working system for e-beam lithography, called PRIME (Positive Resist IMage by dry Etching) is proposed. High contrast (about 6) and resolution 75 nm L/S in O.351um thick resist are achieved. Very steep profiles can be obtai- ned on thick resist even at low accelerating voltage as O.2pm hole in l.2pm thick resist at 20 keV. To be able to quantify both intra and inter proximity effect on positive tone resist specific two layers electric tests chips were designed. Then PRIME process has been compared, in terms of proximity effects magnitude, at 20kV and 50 kV, to RAY-PF resist show- ing clearly advantages over such three components novolac ba- sed positive resist.

Paper Details

Date Published: 1 May 1990
PDF: 15 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20168
Show Author Affiliations
Serge V. Tedesco, LETI/CENG (France)
Christophe Pierrat, LETI/CENG (United States)
Francoise Vinet, LETI/CENG (France)
Brigitte Florin, LETI/CENG (France)
Michel Lerme, LETI/CENG (France)
Jean Charles Guibert, LETI/CENG (France)

Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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