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Proceedings Paper

Phase change materials for multi-level storage phase change memory
Author(s): Kun Ren; Feng Rao; Zhitang Song; Min Zhu; Yuefeng Gong; Liangcai Wu; Bo Liu; Songlin Feng
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Paper Abstract

A phase change memory cell based on Ge0.5Sb2Te3/Ti0.6Sb2Te3 double-layer structure is proposed for 3-level storage. The fabricated cell can realize 3-level storage ability by both current and voltage operation. Cycling ability has been proved better than 2×103. Thermal simulation shows that the resistivity difference between the two materials can greatly affect the temperature distribution in the cell. More heat will be generated in the amorphous Ge Ge0.5Sb2Te3/ film when the current flow through due to the higher resistivity. And the lower crystallization temperature of Ge0.5Sb2Te3/compared to that of Ti0.6Sb2Te3 ensures its priority of crystallization, which makes the 3-level storage feasible.

Paper Details

Date Published: 24 January 2013
PDF: 5 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820I (24 January 2013); doi: 10.1117/12.2016744
Show Author Affiliations
Kun Ren, Shanghai Institute of Microsystem and Information Technology (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Feng Rao, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Min Zhu, Shanghai Institute of Microsystem and Information Technology (China)
Yuefeng Gong, Shanghai Institute of Microsystem and Information Technology (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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