Share Email Print
cover

Proceedings Paper

Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study
Author(s): Grzegorz Sęk; Marcin Motyka; Filip Janiak; Krzysztof Ryczko; Jan Misiewicz; Adam Bauer; Matthias Dallner; Robert Weih; Sven Höfling; Alfred Forchel; Sofiane Belahsene; Guilhem Boissier; Yves Rouillard
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

There are reviewed the optical properties of two kind of active regions of mid infrared laser devices both grown on GaSb substrates: GaInAsSb/AlGaInAsSb type I QWs for laser diodes and InAs/GaInAsSb type II QWs for interband cascade lasers. There are presented their crucial optical properties and the related current challenges with respect to the device performances. This covers such issues as spectral tenability of the emission via the structure parameters, the band gap discontinuities, carrier loss mechanisms and oscillator strengths. For that, spectroscopic techniques have been used (photoluminescence and its temperature dependence, and photoreflectance) and combined with the energy level calculations based on effective mass approximation and kp theory. Eventually, the potential for further material optimization and prospects for the improved device performances are also discussed.

Paper Details

Date Published: 4 February 2013
PDF: 10 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86312O (4 February 2013); doi: 10.1117/12.2016699
Show Author Affiliations
Grzegorz Sęk, Wroclaw Univ. of Technology (Poland)
Marcin Motyka, Wroclaw Univ. of Technology (Poland)
Filip Janiak, Wroclaw Univ. of Technology (Poland)
Krzysztof Ryczko, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Adam Bauer, Julius Maximilian Univ. of Würzburg (Germany)
Matthias Dallner, Julius Maximilian Univ. of Würzburg (Germany)
Robert Weih, Julius Maximilian Univ. of Würzburg (Germany)
Sven Höfling, Julius Maximilian Univ. of Würzburg (Germany)
Alfred Forchel, Julius Maximilian Univ. of Würzburg (Germany)
Sofiane Belahsene, , Institut d’Electronique du Sud, Univ. of Montpellier 2, CNRS (France)
Guilhem Boissier, , Institut d’Electronique du Sud, Univ. of Montpellier 2, CNRS (France)
Yves Rouillard, , Institut d’Electronique du Sud, Univ. of Montpellier 2, CNRS (France)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top