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Proceedings Paper

Reactive etching of a novel phase change material Si2Sb2Te3
Author(s): Mengjiao Xia; Feng Rao; Zhitang Song; Kun Ren; Liangcai Wu; Bo Liu
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Paper Abstract

A novel phase change material, Si2Sb2Te3 has been reported to show good phase change abilities. Etching of this material is a critical step in the fabrication of phase change memory devices. In this paper, the characteristics of Si2Sb2Te3 etched in CF4/Ar atmosphere are investigated. The influence of the etching rate and surface roughness with different CF4/Ar ratio, pressure, and power are systematically studied. Furthermore, our X-ray photoelectron spectroscopy test results show that Te is the bottleneck to accelerating the etching rate.

Paper Details

Date Published: 24 January 2013
PDF: 6 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820Z (24 January 2013); doi: 10.1117/12.2016674
Show Author Affiliations
Mengjiao Xia, Shanghai Institute of Microsystem and Information Technology (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Feng Rao, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Kun Ren, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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