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Proceedings Paper

Advanced chemically amplified resist
Author(s): Hideki Takahashi; Kenichi Wakui; Daniel J.C. Herr; John S. Petersen; Theodore H. Fedynyshyn; Michael Francis Cronin
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Paper Abstract

This paper describes a set of empirical correlations between bulk resist properties and fine line iniaging quality in an Advanced Negative e-beam Resist (ANR) . At the on set of this study, it was not clear whether bulk properties, such as contrast, could be used to predict image quality. Consequently, several definitions of contrast have been examined and compared with imaged structures at four unique processes. These processes were selected based on the results of a modified Taguchi1 L9 experimental design. The slope of the line intersecting the thickness response curve at zero percent and ninety percent retention provides the best correlation with image quality. This bulk parameter is recommended as a suitable nionitor for sub-half micron e-beam ANR image quality in 2.38% TMAH.

Paper Details

Date Published: 1 May 1990
PDF: 13 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20166
Show Author Affiliations
Hideki Takahashi, Shipley Microelectronics Ltd. (Japan)
Kenichi Wakui, Shipley Microelectronics Ltd. (Japan)
Daniel J.C. Herr, Shipley Microelectronics Ltd. (United States)
John S. Petersen, SEMATECH (United States)
Theodore H. Fedynyshyn, Shipley Co., Inc. (United States)
Michael Francis Cronin, Shipley Co., Inc. (United States)


Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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