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Proceedings Paper

X-ray absorbing and mechanical properties of Au-C film for x-ray mask absorber
Author(s): Hiroshi Fukushima; Hitomi Yamada; Teruyuki Matsui; Takashi Tagawa; Shinzo Morita; Shuzo Hattori
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Paper Abstract

The X-ray absorption and mechanical properties of gold containing (Au-C) absorber formed on polyimide membrane for X-ray lithography mask have been investigated. The Au-C films were deposited by the same method as the previous investigators(Itoh et al.)1. (1) The compositional dependence of film stress before and after the exposure to SOR radiation has been observed. As a result, the stress in film changed monotonically ranging from compression (-3xlO8N/m2) to tension (l.2xlO8N/m2) with increasing Au content. Zero film stress was observed at Au atomic composition of 30%. Films originally being compressive (-l.5xlO7N/m2) were found to become tensile (l.OxlO8N/m2) after absorbing l500J/cm3 X-ray. This tendency differs from that of the BN film observed by King et al (2) X-ray absorption ratio in Au-C films were determined by measuring the amount of reduced thickness of resist on development after the exposure of X-ray through Au-C films with various composition ratios. It was found that it tended to fall from 92% to 68% with a decrease of Au atomic composition ratio from 0.85 to 0.11 at the constant absorber thickness of 0.5 pm. (3) Au-C films of various atomic composition ratio were patterned with EB lithography using the PMMA(Polyrnethylmethacrylate) resist and Reactive Ion Etching (RIE) with 02 gas. It was found that the etching rate of the film decreases with increasing Au content. The typical obtained value was approximately 100A/min at around 50% to 60% of Au composition and this was about 4 times higher than etching rate of pure Au. It is concluded that the Au-C absorber on polyimide membrane X-ray mask is practical for VLSI use for submicron pattern fabrication.

Paper Details

Date Published: 1 May 1990
PDF: 12 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20165
Show Author Affiliations
Hiroshi Fukushima, Meitec Corp. (Japan)
Hitomi Yamada, Meitec Corp. (Japan)
Teruyuki Matsui, Meitec Corp. (Japan)
Takashi Tagawa, Meitec Corp. (Japan)
Shinzo Morita, Nagoya Univ. (Japan)
Shuzo Hattori, Meitec Corp. (Japan)


Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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