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Proceedings Paper

Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared
Author(s): T. Tansel; K. Kutluer; A. Muti; Ö. Salihoglu; A. Aydinli; R. Turan
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Paper Abstract

We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid-Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si3N4 passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO2 passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data.

Paper Details

Date Published: 11 June 2013
PDF: 9 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040Y (11 June 2013); doi: 10.1117/12.2016388
Show Author Affiliations
T. Tansel, Middle East Technical Univ. (Turkey)
K. Kutluer, Middle East Technical Univ. (Turkey)
A. Muti, Bilkent Univ. (Turkey)
Ö. Salihoglu, Bilkent Univ. (Turkey)
A. Aydinli, Bilkent Univ. (Turkey)
R. Turan, Middle East Technical Univ. (Turkey)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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