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Proceedings Paper

Monte Carlo simulation of x-ray photoemission electron microscopic image
Author(s): Z. M. Zhang; T. Tang; S. F. Mao; Z. J. Ding
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Paper Abstract

A new Monte Carlo method is built to describe the generation and transport processes of photoelectrons excited by incident X-ray. XPEEM images for Ag- and Au-dot array on substrate Si are simulated at different incident conditions by the Monte Carlo method. The trajectories of electrons scattered near dot sides and substrate surface were given to visualize the photoelectron penetrating processes. The simulated XPEEM images in TEY mode are found very close to the experimental observations.

Paper Details

Date Published: 29 May 2013
PDF: 7 pages
Proc. SPIE 8729, Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences, 87290L (29 May 2013); doi: 10.1117/12.2016301
Show Author Affiliations
Z. M. Zhang, Univ. of Science and Technology of China (China)
T. Tang, Univ. of Science and Technology of China (China)
S. F. Mao, Univ. of Science and Technology of China (China)
Z. J. Ding, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 8729:
Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences
Michael T. Postek; Dale E. Newbury; S. Frank Platek; Tim K. Maugel, Editor(s)

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