
Proceedings Paper
Modeling of thermal stresses and distortions in x-ray masks employing the embedded absorber structureFormat | Member Price | Non-Member Price |
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Paper Abstract
The distortions that arise from thermal stresses in X-ray masks which employ the embedded
absorber structure are modelled and analyzed. By using a quasi two-dimensional model, both in-plane
and out-of-plane distortions were characterized and their dependence on the fractional absorber
coverage was calculated. These distortions were found to be large when the absorber was initially
deposited at a high temperature; however they can be greatly reduced by adding a buffer layer between
the absorber and membrane. The Young's modulus and the linear expansion coefficient of this buffer
layer are chosen such that the mask distortions are compensated for. Without the buffer layer, the shear
and peeling stresses at the absorber-membrane interface were found to increase exponentially with
distance near the absorber edges and may cause fatigue. These results were found in agreement with
computer simulations.
Paper Details
Date Published: 1 May 1990
PDF: 11 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20162
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
PDF: 11 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20162
Show Author Affiliations
Nadim I. Maluf, Stanford Univ. (United States)
Stephen Y. Chou, Stanford Univ. (United States)
Stephen Y. Chou, Stanford Univ. (United States)
Roger Fabian W. Pease, Stanford Univ. (United States)
Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)
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