Share Email Print
cover

Proceedings Paper

High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Author(s): Yuksel Ergun; Mustafa Hostut; Tunay Tansel; Abdullah Muti; Abidin Kilic; Rasit Turan; Atilla Aydinli
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6x10-3 A/cm2 and 148 Ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings.

Paper Details

Date Published: 11 June 2013
PDF: 9 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870414 (11 June 2013); doi: 10.1117/12.2016133
Show Author Affiliations
Yuksel Ergun, Anadolu Univ. (Turkey)
Mustafa Hostut, Akdeniz Univ. (Turkey)
Tunay Tansel, Middle East Technical Univ. (Turkey)
Abdullah Muti, Bilkent Univ. (Turkey)
Abidin Kilic, Anadolu Univ. (Turkey)
Rasit Turan, Middle East Technical Univ. (Turkey)
Atilla Aydinli, Bilkent Univ. (Turkey)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

© SPIE. Terms of Use
Back to Top