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Proceedings Paper

E-beam direct write of rectangular and mushroom gates for GaAs FETs
Author(s): Zoilo C. H. Tan; Scott E. Silverman
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Paper Abstract

Electron-beam lithography was used to fabricate half-micron, quarter-micron and sub-quartermicron gates for MMIC applications. Both rectangular and mushroom gates were used. This paper describes our experience in the fabrication of various gates, with emphasis on obtaining good reproducibility and high yield. For optimum utilization of machine time, the operating condition of the exposure system was maintained at 30 kV and 1 .6-mm field size for most applications. In the case of extremely fine gates of 0. 1 .tm or less, the accelerating voltage used was 40 kV. Gates with excellent reproducibility and yield of □ 90% were obtained.

Paper Details

Date Published: 1 May 1990
PDF: 11 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20161
Show Author Affiliations
Zoilo C. H. Tan, Varian Research Ctr. (United States)
Scott E. Silverman, Varian Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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