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Proceedings Paper

Infrared emitters and photodetectors with InAsSb bulk active regions
Author(s): Ding Wang ; Youxi Lin; Dmitry Donetsky; Gela Kipshidze ; Leon Shterengas; Gregory Belenky; Stefan P. Svensson; Wendy L. Sarney; Harry Hier
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Paper Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 µm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Paper Details

Date Published: 11 June 2013
PDF: 10 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870410 (11 June 2013); doi: 10.1117/12.2016082
Show Author Affiliations
Ding Wang , Stony Brook Univ. (United States)
Youxi Lin, Stony Brook Univ. (United States)
Dmitry Donetsky, Stony Brook Univ. (United States)
Gela Kipshidze , Stony Brook Univ. (United States)
Leon Shterengas, Stony Brook Univ. (United States)
Gregory Belenky, Stony Brook Univ. (United States)
Stefan P. Svensson, U.S. Army Research Lab. (United States)
Wendy L. Sarney, U.S. Army Research Lab. (United States)
Harry Hier, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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