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Proceedings Paper

Vacuum passivated T-gates: a new method for fabricating submicron gates
Author(s): Donald K. Atwood
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Paper Abstract

This paper will outline a novel technique for fabricating T-gates. Although dependent upon two lithographic exposures, this process is more robust and flexible than existing techniques. The resultant gates are structurally stable, with electrical resistance that can be made arbitrarily small by increasing the size of the T-gate top. Moreover, this gate process is fully compatible with existing MESFET and HEMT fabrication methods. Performance of microwave devices will be presented, contrasting 0.25 tm conventional gates with vacuum passivated T-gates. The T-gates will be shown to offer superior breakdown and gain performance and to produce FET characteristics which remain stable from gate level to final frontside.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20160
Show Author Affiliations
Donald K. Atwood, Raytheon Co. (United States)

Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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