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Proceedings Paper

Surface states characterization and simulation of Type-II In(Ga)Sb quantum dot structures for processing optimization of LWIR detectors
Author(s): Qin Wang; Mina Rajabi; Amir Karim; Susanne Almqvist; Mietek Bakowski; Susan Savage; Jan Y. Andersson; Mats Göthelid; Shun Yu; Oscar Gustafsson; Mattias Hammar; Carl Asplund
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Paper Abstract

Quantum structures base on type-II In(Ga)Sb quantum dots (QDs) embedded in an InAs matrix were used as active material for achieving long-wavelength infrared (LWIR) photodetectors in this work. Both InAs and In(Ga)Sb are narrow band semiconductor materials and known to possess a large number of surface states, which apparently play significant impact for the detector’s electrical and optical performance. These surface states are caused not only by material or device processing induced defects but also by surface dangling bonds, oxides, roughness and contaminants. To experimentally analyze the surface states of the QD structures treated by different device fabrication steps, atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) measurements were performed. The results were used to optimize the fabrication process of the LWIR photodetectors in our ongoing project. The dark current and its temperature dependence of the fabricated IR photodetectors were characterized in temperature range 10 K to 300 K, and the experiment results were analyzed by a theoretic modeling obtained using simulation tool MEDICI.

Paper Details

Date Published: 18 June 2013
PDF: 8 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870433 (18 June 2013); doi: 10.1117/12.2015966
Show Author Affiliations
Qin Wang, Acreo Swedish ICT AB (Sweden)
Mina Rajabi, Acreo Swedish ICT AB (Sweden)
Amir Karim, Acreo Swedish ICT AB (Sweden)
Susanne Almqvist, Acreo Swedish ICT AB (Sweden)
Mietek Bakowski, Acreo Swedish ICT AB (Sweden)
Susan Savage, Acreo Swedish ICT AB (Sweden)
Jan Y. Andersson, Acreo Swedish ICT AB (Sweden)
Mats Göthelid, Royal Institute of Technology (Sweden)
Shun Yu, Royal Institute of Technology (Sweden)
Oscar Gustafsson, Royal Institute of Technology (Sweden)
Mattias Hammar, Royal Institute of Technology (Sweden)
Carl Asplund, IRnova AB (Sweden)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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