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Proceedings Paper

Charge redistribution in adaptable quantum-dot and quantum-well nanomaterials for infrared sensing
Author(s): V. Mitin; Jae Kyu Choi; G. Thomain; K. Sablon; S. Oktyabrsky; N. Vagidov; A. Sergeev
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Paper Abstract

Optoelectronic materials for advanced IR sensing should combine wide strong electron coupling to the IR radiation, spectral tunability, adjustable dynamic range, manageable trade-off parameters, such as the noise characteristics and the operating time. Modern nanomaterials based on quantum dots and quantum wells provide wide possibilities to manage photoelectron processes via tuning the charge of quantum dots and quantum wells by the electric field and/or optical pumping. Variations in charge built in dots and wells change spectral characteristics, photocarrier lifetimes, and noise processes. These effects are especially strong in nanomaterials with strong selective doping of dots and wells. Manageable built-in charge provides wide possibilities to control the spectra, detector responsivity, and recombination processes.

Paper Details

Date Published: 29 May 2013
PDF: 6 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250D (29 May 2013); doi: 10.1117/12.2015830
Show Author Affiliations
V. Mitin, Univ. at Buffalo (United States)
Jae Kyu Choi, Univ. at Buffalo (United States)
G. Thomain, Univ. at Buffalo (United States)
K. Sablon, U.S. Army Research Lab. (United States)
S. Oktyabrsky, Univ. at Albany (United States)
N. Vagidov, Optoelectronic Nanodevices LLC (United States)
A. Sergeev, Univ. at Buffalo (United States)


Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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