Share Email Print
cover

Proceedings Paper

Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon
Author(s): Girija Gaur; Dmitry Koktysh; Daniel M. Fleetwood; Robert A. Reed; Robert A. Weller; Sharon M. Weiss
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO2) to 16 Mrad(SiO2).

Paper Details

Date Published: 29 May 2013
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); doi: 10.1117/12.2015595
Show Author Affiliations
Girija Gaur, Vanderbilt Univ. (United States)
Dmitry Koktysh, Vanderbilt Univ. (United States)
Daniel M. Fleetwood, Vanderbilt Univ. (United States)
Robert A. Reed, Vanderbilt Univ. (United States)
Robert A. Weller, Vanderbilt Univ. (United States)
Sharon M. Weiss, Vanderbilt Univ. (United States)


Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

© SPIE. Terms of Use
Back to Top