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Proceedings Paper

Low-dark current structures for long-wavelength Type-II strained layer superlattice photodiodes
Author(s): Zhaobing Tian; Eric A. DeCuir; Priyalal S. Wijewarnasuriya; James W. Pattison; Nutan Gautam; Sanjay Krishna ; Nibir Dhar; Roger E. Welser ; Ashok K. Sood
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Paper Abstract

This paper describes our efforts on the development of low dark current long-wave infrared (LWIR) photodetectors based on type-II InAs/GaSb strained superlattices. By adopting a so-called pBiBn structure, a hybrid between the conventional PIN structure and unipolar barrier concepts, suppressed dark current and near-zero-bias operation are obtained, respectively. The LWIR photodetector has a dark current density as low as 1.42×10-5 A/cm2 at -60 mV, and R0A of 5365 Ωcm2 at 76 K. The measured peak detectivity at 10.2 µm of 8.7×1010 cmHz1/2W-1 is obtained at -60 mV at 76 K. To further improve the device performances, a newer design with longer cut-off wavelength targeted for near zero-bias was also realized. This 2-µm-thick device exhibits a quantum efficiency of 20% at 10 µm under zero-bias.

Paper Details

Date Published: 11 June 2013
PDF: 11 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870415 (11 June 2013); doi: 10.1117/12.2015489
Show Author Affiliations
Zhaobing Tian, Univ. of New Mexico (United States)
Eric A. DeCuir, U.S. Army Research Lab. (United States)
Priyalal S. Wijewarnasuriya, U.S. Army Research Lab. (United States)
James W. Pattison, U.S. Army Research Lab. (United States)
Nutan Gautam, Univ. of New Mexico (United States)
Sanjay Krishna , Univ. of New Mexico (United States)
Nibir Dhar, DARPA/MTO (United States)
Roger E. Welser , Magnolia Optical Technologies, Inc. (United States)
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

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