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Proceedings Paper

Radiation effects in solar cells
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Paper Abstract

Two types of space solar cells, silicon single-junction and InGaP/GaAs/Ge triple-junction (3J) solar cells, have been primarily adopted for spacecraft. The conversion efficiencies of the solar cells under AM0, 1 sun condition are ~17% for silicon and ~30% for 3J cells. Radiation degradation occurs in space due to high-energy electrons and protons existing in space environment. The degradation is caused by radiation induced crystal defects which act as minority-carrier recombination centers and majority-carrier trap centers. The 3J cells are superior radiation resistant to the silicon cells, and this is mainly because the InGaP top-subcell has property of very high radiation resistance.

Paper Details

Date Published: 29 May 2013
PDF: 8 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 872515 (29 May 2013); doi: 10.1117/12.2015362
Show Author Affiliations
Mitsuru Imaizumi, Japan Aerospace Exploration Agency (Japan)
Takeshi Ohshima, Japan Atomic Energy Agency (Japan)

Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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