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Proceedings Paper

ALF: a facility for x-ray lithography
Author(s): L. Grant Lesoine; Kenneth W. Kukkonen; Jeffrey A. Leavey
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Paper Abstract

In the previous paper, you heard a description of the electron storage ring system that IBM has ordered for X-ray Lithography. In this paper we shall describe the facility that is being constructed for the ESR and explain some of the decisions made in its design. The facility, which we have dubbed ALF for Advanced Lithographic Facility, is a part of the $O.5B Advanced Semiconductor Technology Center now being occupied at IBM's East Fishkill, New York semiconductor plant. Ground was broken in October of 1988 and the ALF building is expected to be ready for occupancy in July of this year. At that time, initial preparations for installation of the ESR and the lithographic tooling will begin. Bechtel National of San Francisco is the Design-Build contractor. As you may have concluded from Dave Andrew's paper, an ESR and its associated cryogenic, cooling, power and control systems is a complex tool which requires specialized support. In addition, the facility must support the vibration control and clean room requirements of submicron lithographic processing. Also, significant concerns of safety and security must be met. We will now describe our solutions to these requirements.

Paper Details

Date Published: 1 May 1990
PDF: 9 pages
Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); doi: 10.1117/12.20153
Show Author Affiliations
L. Grant Lesoine, IBM Corp. (United States)
Kenneth W. Kukkonen, IBM Corp. (United States)
Jeffrey A. Leavey, IBM/Thomas J. Watson Research (United States)

Published in SPIE Proceedings Vol. 1263:
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX
Douglas J. Resnick, Editor(s)

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