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Proceedings Paper

Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations
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Paper Abstract

This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.

Paper Details

Date Published: 29 May 2013
PDF: 16 pages
Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250F (29 May 2013); doi: 10.1117/12.2015089
Show Author Affiliations
Taiichi Otsuji, Tohoku Univ. (Japan)
Takayuki Watanabe, Tohoku Univ. (Japan)
Stephane Albon Boubanga Tombet, Tohoku Univ. (Japan)
Akira Satou, Tohoku Univ. (Japan)
Victor Ryzhii, Tohoku Univ. (Japan)
Vyacheslav Popov, Institute of Radio Engineering and Electronics (Russian Federation)
Wojciech Knap, LC2 Labs., CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 8725:
Micro- and Nanotechnology Sensors, Systems, and Applications V
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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