Share Email Print
cover

Proceedings Paper

XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide
Author(s): Changmeng Deng; Yongyou Geng; Yiqun Wu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Phase change lithography has pretty potential applications for high density optical data storage mastering and micro/nano structure patterning because it is not restricted by optical diffraction limitation and at relatively low cost. GeSbTe, as an initially investigated material for phase change lithography, its mechanism of selective etching in inorganic or organic alkaline aqueous solutions, such as NaOH and tetramethylammonium hydroxide (TMAH), is still unknown. In this paper, XPS measurement is used to study the selective wet etching mechanism of GeSbTe phase change thin films with TMAH solution, and the results show that oxidization played an important role in the etching process. Ge, Sb and Te are oxidized into GeO2, Sb2O5 and TeO2, respectively, and then as the corresponding salts dissolved into the etchant solution. Ge-X (X is Ge, Sb or Te) bonds are first broken in the etching, then Sb-X bonds, and finally Te-Te bonds. To confirm the effect of oxidization in the etching, H2O2 as an oxidant is added into the TMAH solution, and the etching rates are increased greatly for both amorphous and crystalline states. The selective etching mechanism of Ge2Sb2Te5 phase change films is discussed by the difference of bonds breakage between the amorphous and crystalline states.

Paper Details

Date Published: 24 January 2013
PDF: 6 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820N (24 January 2013); doi: 10.1117/12.2014922
Show Author Affiliations
Changmeng Deng, Shanghai Institute of Optics and Fine Mechanics (China)
Graduate Univ. of Chinese Academy of Sciences (China)
Yongyou Geng, Shanghai Institute of Optics and Fine Mechanics (China)
Yiqun Wu, Shanghai Institute of Optics and Fine Mechanics (China)
Heilongjiang Univ. (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

© SPIE. Terms of Use
Back to Top