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Proceedings Paper

Thermal properties of Te-based phase-change materials
Author(s): Xiaolin Cai; Jingsong Wei
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Paper Abstract

Te-based phase-change materials (such as Te, Ge2Sb2Te5, and Ag8In14Sb55Te23) are employed now in optical data storage and non-volatile electrical memory due to the acceptable optical and electrical contrast between the crystalline and amorphous states. Thermal properties of the materials have an important influence on the device performance. In this work, the dependence of thermal properties of Te-based phase-change materials on temperature is measured and analyzed. Comparisons among these three Te-based phase-change materials are made, and the origins of thermal conductivity in Te, Ge2Sb2Te5 and AgInSbTe are also discussed. One can see that the thermal properties of crystalline Ge2Sb2Te5 are more similar to those of Te with respect to AgInSbTe due to containing higher percentage of Te element. These experimental data can be helpful for optimizing the performance of phase change memory devices.

Paper Details

Date Published: 24 January 2013
PDF: 6 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820O (24 January 2013); doi: 10.1117/12.2014908
Show Author Affiliations
Xiaolin Cai, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Jingsong Wei, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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