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Proceedings Paper

Investigation of Sb-rich Sb-Te binary films used as phase change material
Author(s): Yan Cheng; Yifeng Gu; Zhitang Song; Sannian Song; Feng Rao; Liangcai Wu; Bo Liu; Songlin Feng
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Paper Abstract

Sb-rich Sb-Te films with different composition were investigated by temperature-dependent resistance measurement, crystal structure characterization, and in situ crystallization behavior study. The results show that when the Sb content is more than 80 at.%, Sb-rich Sb-Te films cannot be used as phase change material due to their low crystallization temperature and small resistance contrast. Sb-rich Sb-Te films with the Sb content being between 80~67 at.% can be used as phase-change-material and they have similar properties because of their similar growth-dominant crystallization behaviors.

Paper Details

Date Published: 24 January 2013
PDF: 7 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820H (24 January 2013); doi: 10.1117/12.2014873
Show Author Affiliations
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Yifeng Gu, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Feng Rao, Shanghai Institute of Microsystem and Information Technology (China)
Liangcai Wu, Shanghai Institute of Microsystem and Information Technology (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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