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Proceedings Paper

Real-time measurement of electrical and optical transients of as-deposited amorphous AgInSbTe thin films during crystallization induced by single-shot picosecond laser pulses
Author(s): G. F. Liang; S. M. Li; H. Huang; F. X. Zhai; Y. Wang; T. S. Lai; Y. Q. Wu
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Paper Abstract

The crystallization properties of as-deposited amorphous AgInSbTe thin films irradiated by single-shot picosecond laser pulses were studied using in-situ transient optical reflectance and electrical resistance measurements with nanosecond resolution. It was found that the real-time optical and electrical signal responses were different under the same pumping conditions. The optical signals showed a multistage crystallization process with a total time of approximately 150 ns, while the electrical signals showed a negative exponential trend decreasing to the final stable state within about several microseconds. A resistor–capacitor model was constructed to explain this delayed electrical response. The fluencedependent evolution dynamics maybe implied a non-fully crystallization process under ultra-short pulse stimulation.

Paper Details

Date Published: 24 January 2013
PDF: 8 pages
Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820M (24 January 2013); doi: 10.1117/12.2014860
Show Author Affiliations
G. F. Liang, Shanghai Institute of Optics and Fine Mechanics (China)
S. M. Li, Sun Yat-Sen Univ. (China)
H. Huang, Shanghai Institute of Optics and Fine Mechanics (China)
F. X. Zhai, Shanghai Institute of Optics and Fine Mechanics (China)
Y. Wang, Shanghai Institute of Optics and Fine Mechanics (China)
T. S. Lai, Shanghai Institute of Optics and Fine Mechanics (China)
Y. Q. Wu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 8782:
2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song, Editor(s)

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