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Proceedings Paper

A SiGe BiCMOS W-band passive imaging receiver using lossless flicker-noise cancellation
Author(s): Vipul Jain; Farbod Behbahani
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Paper Abstract

This paper presents the design and measured results of a highly integrated silicon-based receiver chip for W-band imaging applications. The receiver chip integrates all necessary RF and analog functions including millimeter-wave amplification and power detection, baseband amplification, sample-and-hold, clock generation, imager calibration, bias generation, and digital control. Using a novel flicker-noise cancellation technique, the imaging receiver achieves a record NETD of 0.22K/0.15K/0.1K for 3ms/10ms/30ms integration time, and a responsivity of 140 MV/W. The chip is fabricated in a 0.18-µm SiGe BiCMOS technology with 240/280-GHz fT/fmax and occupies 2.5mm×2.5mm. The power dissipation of the receiver is 40 mW.

Paper Details

Date Published: 31 May 2013
PDF: 5 pages
Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871504 (31 May 2013); doi: 10.1117/12.2014717
Show Author Affiliations
Vipul Jain, SaberTek, Inc. (United States)
Farbod Behbahani, SaberTek, Inc. (United States)


Published in SPIE Proceedings Vol. 8715:
Passive and Active Millimeter-Wave Imaging XVI
David A. Wikner; Arttu R. Luukanen, Editor(s)

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