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Proceedings Paper

Properties of RLSA microwave surface wave plasma and its applications to finFET fabrication
Author(s): Lee Chen; Qingyun Yang
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Paper Abstract

A new type of plasma source (RLSATM) is described to generate low temperature plasma in the wafer region. The low Te characteristic arises from decoupling of wafer region palsma from the power deposition region. This new plasma source has been demonstrated to show improved performance in etching high aspect ratio structures with reduced micro-loading and ARDE and can help mitigate challenges in advanced finFET FEOL etch applications.

Paper Details

Date Published: 29 March 2013
PDF: 6 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850H (29 March 2013); doi: 10.1117/12.2014367
Show Author Affiliations
Lee Chen, Tokyo Electron America, Inc. (United States)
Qingyun Yang, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)

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