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Proceedings Paper

Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications
Author(s): Hsin-Yu Tsai; Hiroyuki Miyazoe; Sebastian Engelmann; Sarunya Bangsaruntip; Isaac Lauer; Jim Bucchignano; Dave Klaus; Lynne Gignac; Eric Joseph; Joy Cheng; Dan Sanders; Michael Guillorn
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Paper Abstract

We present a study on the optimization of etch transfer processes for circuit relevant patterning in the sub 30 nm pitch regime using directed self assembly (DSA) line-space patterning. This work is focused on issues that impact the patterning of thin silicon fins and gate stack materials. Plasma power, chuck temperature and end point strategy is discussed in terms of their effect on critical dimension (CD) control and pattern fidelity. A systematic study of post-plasma etch annealing processes shows that both CD and line edge roughness (LER) in crystalline Si features can be further reduced while maintaining a suitable geometry for scaled FinFET devices. Results from DSA patterning of gate structures featuring a high-k dielectric, a metal nitride and poly Si gate electrode and a SiN capping layer are also presented. We conclude with the presentation of a strategy for realizing circuit patterns from groups of DSA patterned fins. These combined results further establish the viability of DSA pattern generation as a potential method for CMOS integrated circuit patterning beyond the 10 nm node.

Paper Details

Date Published: 29 March 2013
PDF: 9 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850L (29 March 2013); doi: 10.1117/12.2014259
Show Author Affiliations
Hsin-Yu Tsai, IBM Thomas J. Watson Research Ctr. (United States)
Hiroyuki Miyazoe, IBM Thomas J. Watson Research Ctr. (United States)
Sebastian Engelmann, IBM Thomas J. Watson Research Ctr. (United States)
Sarunya Bangsaruntip, IBM Thomas J. Watson Research Ctr. (United States)
Isaac Lauer, IBM Thomas J. Watson Research Ctr. (United States)
Jim Bucchignano, IBM Thomas J. Watson Research Ctr. (United States)
Dave Klaus, IBM Thomas J. Watson Research Ctr. (United States)
Lynne Gignac, IBM Thomas J. Watson Research Ctr. (United States)
Eric Joseph, IBM Thomas J. Watson Research Ctr. (United States)
Joy Cheng, IBM Almaden Research Ctr. (United States)
Dan Sanders, IBM Almaden Research Ctr. (United States)
Michael Guillorn, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)

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