Share Email Print
cover

Proceedings Paper

Nickel-oxide film as an AR coating of Si window for IR sensor packaging
Author(s): Hyunbin Shim; Dongsoo Kim; Ingu Kang; Jinkwan Kim; Hee Chul Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An infrared (IR) transparent window is necessary for the IR sensor package. The most commonly used materials for IR transparent window are germanium (Ge) and silicon (Si). Ge has excellent optical properties but also the disadvantage of expensive price. Si has merits such as inexpensive cost and CMOS process compatibility but it has lower transmittance in the range of LWIR region than Ge. Therefore, an alternative anti-reflection (AR) coating is necessary to increase the transmittance of Si as an IR transparent window in the LWIR region. A simple single layer antireflection coating was newly designed on the silicon window for the infrared sensor package. Among the various materials, nickel oxide (NiO) was selected as an AR coating material due to its suitable optical properties and simple process. NiO film was deposited onto the double sided polished Si wafer by reactive rf sputtering with Ni target in an environment of Ar and O2 mixed gas. The thickness of the NiO film was determined by Essential Macleod simulation. FT-IR was used to measure the transmittance of the samples in the LWIR region. After the nickel oxide film was sputtered onto the double sides of the silicon wafer, the measured transmittance of the Si wafer was increased over 20% in the LWIR region compared with that of uncoated Si wafer. Additionally, annealing effect on the transmittance of NiO coated Si wafer was studied. By increasing the annealing temperature from 300° to 700°, an additional increase of transmittance was achieved.

Paper Details

Date Published: 18 June 2013
PDF: 6 pages
Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870420 (18 June 2013); doi: 10.1117/12.2013929
Show Author Affiliations
Hyunbin Shim, KAIST (Korea, Republic of)
Dongsoo Kim, KAIST (Korea, Republic of)
Ingu Kang, KAIST (Korea, Republic of)
Jinkwan Kim, KAIST (Korea, Republic of)
Hee Chul Lee, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 8704:
Infrared Technology and Applications XXXIX
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton; Patrick Robert, Editor(s)

© SPIE. Terms of Use
Back to Top