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Proceedings Paper

Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas
Author(s): Gang Wang; Ping Li; Guojun Zhang; Wei Li; Liping Dai; Jing Jiang
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Paper Abstract

Etching mechanisms and characteristics of bismuth zinc niobate (BZN) thin films were investigated in inductively coupled SF6/Ar plasmas. The influences of various etching parameters including the gas flow ratio, process pressure, and ICP power on the etching results were analyzed. It is found that the chemical etching with F radicals was more effective than the physical sputtering etching with Ar ions for the inductively coupled plasma etching of BZN thin films. The mechanism of ion assisted chemical etching of BZN thin films in SF6/Ar plasmas was proposed. A maximum etch rate of approximately 43.15 nm/min for the BZN thin film was obtained at the optimum etching conditions: 3/2 for the SF6/Ar gas flow ratio, 10 mTorr for the process pressure, and 600 W for the ICP power. The surface morphology of the etched BZN thin film was observed, where was smooth and clean and no post-etch residues were remained.

Paper Details

Date Published: 13 March 2013
PDF: 4 pages
Proc. SPIE 8783, Fifth International Conference on Machine Vision (ICMV 2012): Computer Vision, Image Analysis and Processing, 87830Q (13 March 2013); doi: 10.1117/12.2013904
Show Author Affiliations
Gang Wang, Univ. of Electronic Science and Technology of China (China)
Ping Li, Univ. of Electronic Science and Technology of China (China)
Guojun Zhang, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Liping Dai, Univ. of Electronic Science and Technology of China (China)
Jing Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 8783:
Fifth International Conference on Machine Vision (ICMV 2012): Computer Vision, Image Analysis and Processing
Yulin Wang; Liansheng Tan; Jianhong Zhou, Editor(s)

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