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Proceedings Paper

Simulation of spacer-based SADP (Self-Aligned Double-Patterning) for 15nm half pitch
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Paper Abstract

Spacer based SADP (Self-Aligned Double Patterning) is used increasingly in IC manufacturing as design rules outstrip the resolution capabilities of traditional single exposure lithography processes. In this paper, a 15nm half pitch SADP process based upon an EUV single exposure produced mandrel is modeled using commercial simulation software (PROLITH X4.2, KLA-Tencor corp.). Good accuracy is observed when the simulated results are compared to actual experimental results. Artifacts present in the final spacer pattern are clearly traceable to the resist imaging step.

Paper Details

Date Published: 12 April 2013
PDF: 5 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86830Y (12 April 2013); doi: 10.1117/12.2013877
Show Author Affiliations
Stewart Robertson, KLA-Tencor Texas (United States)
Patrick Wong, IMEC (Belgium)
Janko Versluijs, IMEC (Belgium)
Vincent Wiaux, IMEC (Belgium)


Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

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