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Proceedings Paper

Buckling characterization of gate all around silicon nanowires
Author(s): Shimon Levi; Ishai Schwarzband; Yakov Weinberg; Roger Cornell; Ofer Adan; Guy M. Cohen; Cheng Cen; Lynne Gignac
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Paper Abstract

Imaging of suspended silicon nanonwires (SiNW) by SEM reveals that some of the SiNW are buckled. Buckling can impact device performance and it is therefore important to characterize this phenomenon. Measuring the buckling of suspended silicon nanowires (SiNW) poses significant challenges: (1) Small dimensions - SiNW are made with diameters ranging from about 3 to 10 nm and the buckling is of a similar scale. (2) Accurate height measurements – buckling is a three dimensional phenomena.
To meet these challenges a new height map reconstruction technique was introduced, using the CDSEM side detectors signal. Measuring pixel by pixel position in X, Y and Z (height) dimensions, we can obtain the buckling vector gradient along the wire in three dimensions. In this paper we present: (1) A description of the height map reconstruction technique used. (2) Three dimensional characterization of SiNW: (a) SiNW buckling measurements (b) Characterization of buckling as a function of the SiNW length and width.

Paper Details

Date Published: 18 April 2013
PDF: 10 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868130 (18 April 2013); doi: 10.1117/12.2013810
Show Author Affiliations
Shimon Levi, Applied Materials (Israel)
Ishai Schwarzband, Applied Materials (Israel)
Yakov Weinberg, Applied Materials (Israel)
Roger Cornell, Applied Materials (Israel)
Ofer Adan, Applied Materials (Israel)
Guy M. Cohen, IBM Thomas J. Watson Research Ctr. (United States)
Cheng Cen, IBM Thomas J. Watson Research Ctr. (United States)
Lynne Gignac, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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